发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA WRITE THEREIN |
摘要 |
A memory cell comprises a first semiconductor layer, and a first conductive layer. The first semiconductor layer extends in a perpendicular direction with respect to a semiconductor substrate. The first conductive layer sandwiches a charge storage layer with the first semiconductor layer. A control circuit executes a first program operation and then executes a second program operation. The first program operation supplies a first voltage to the body of the memory cell and supplies a second voltage larger than the first voltage to the gate of the memory cell. The second program operation renders the body of the memory cell in a floating state and supplies a third voltage which is positive to the gate of the memory cell.
|
申请公布号 |
US2013021848(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213427263 |
申请日期 |
2012.03.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;IWAI HITOSHI;FUJIWARA TOMOKO;AOCHI HIDEAKI;KITO MASARU |
发明人 |
IWAI HITOSHI;FUJIWARA TOMOKO;AOCHI HIDEAKI;KITO MASARU |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|