NONVOLATILE RESISTANCE CHANGE ELEMENT

摘要

According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.