SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce source/drain region resistance or contact resistance of an nMISFET of a group III-V semiconductor and a pMISFET of a group IV semiconductor, which are formed simultaneously in the same process on a single substrate.

SOLUTION: A semiconductor device comprises: a first-channel first MISFET formed on a first semiconductor crystal layer including a first source and a first drain each composed of a compound of an atom composing the first semiconductor crystal layer and a nickel atom, or a compound of the atom composing the first semiconductor crystal layer and a cobalt atom, or a compound of the atom composing the first semiconductor crystal layer, a nickel atom and a cobalt atom; and a second-channel second MISFET formed on a second semiconductor crystal layer including a second source and a second drain each composed of a compound of an atom composing the second semiconductor crystal layer and a nickel atom, or a compound of the atom composing the second semiconductor crystal layer and a cobalt atom, or a compound of the atom composing the second semiconductor crystal layer, a nickel atom and a cobalt atom.

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