| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent increase in resistivity of wiring caused by charge transfer in high density between a floating wiring and washing water. <P>SOLUTION: In a manufacturing process performed by a semiconductor manufacturing apparatus, a connection via PL2 that electrically functions and a dummy via DP2 that does not electrically functions are formed on a top face of a first layer wiring L1 that is a floating copper wiring insulated from a semiconductor substrate 1S and the like, and connected with each other. Because of this, when charge accumulated on the first layer wiring L1 transfers in a cleaning process after forming a via hole for forming the connection via PL2 on the top face of the first layer wiring L1, the charge is prevented from concentrating only on a bottom of the via hole for forming the connection via PL2 by dispersing the charge also on the via hole for forming the dummy via DP2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
