| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ceramics wiring substrate which suppresses reduction of joint strength of a semiconductor device. <P>SOLUTION: A ceramics wiring substrate 10 comprises a ceramics substrate 11 and a wiring layer 12 formed thereon. The wiring layer 12 comprises: a wiring part 13 including a foundation metal layer 15, a first diffusion prevention layer 16, and a first Au layer 17 sequentially stacked on a surface of the ceramics substrate 11; and a connection part 14 including a second diffusion prevention layer 19, a hole suppression layer 20, and a solder layer 18 sequentially stacked in a desired position on the wiring part 13. The hole suppression layer 20 is formed of Au or an Au-Sn alloy containing 85 mass% of Au. <P>COPYRIGHT: (C)2013,JPO&INPIT |
