| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which can further suppress occurrence of blooming, color mixture, or the like. <P>SOLUTION: A solid-state imaging device 100 comprises a photoelectric conversion portion 11 including a first impurity layer 5 whose carrier polarity is a first conductivity type, a second impurity layer 6 whose carrier polarity is a second conductivity type, and a third impurity layer 7 whose carrier polarity is a third conductivity type, which are formed in this order. The third impurity layer 7 is connected to an impurity region portion 16, and a gate electrode 3 is formed so as to cover the third impurity layer 7. With this configuration, during a photoelectric conversion time period, an overflow path for surplus electrons is formed in a direction headed from the photoelectric conversion portion 11 to the third impurity layer 7 through the second impurity layer 6, to drain the surplus electrons of the photoelectric conversion portion 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
