发明名称 |
METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS |
摘要 |
Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN). |
申请公布号 |
WO2012162196(A3) |
申请公布日期 |
2013.01.24 |
申请号 |
WO2012US38729 |
申请日期 |
2012.05.18 |
申请人 |
APPLIED MATERIALS, INC.;MELNIK, YURIY;CHEN, LU;KOJIRI, HIDEHIRO |
发明人 |
MELNIK, YURIY;CHEN, LU;KOJIRI, HIDEHIRO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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地址 |
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