发明名称 Semiconductor substrate, method for forming electrode, and method for manufacturing solar cell
摘要 Disclosed is a semiconductor substrate which is provided with at least an electrode having a multilayer structure of two or more layers. In the multilayer structure, at least a first electrode layer which is directly joined with the semiconductor substrate contains at least silver and a glass frit, while containing at least one of the oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb and Zn as an additive. Meanwhile, among the electrode layers formed on the first electrode layer, at least the outermost electrode layer which is joined with the wiring contains at least silver and a glass frit without containing any of the above-described additives. Consequently, the semiconductor substrate can be provided with an electrode which is reduced in both contact resistance and wiring resistance, while having sufficient bonding strength with the semiconductor substrate as well as sufficient bonding strength with the wiring via a solder.
申请公布号 AU2007282721(B2) 申请公布日期 2013.01.24
申请号 AU20070282721 申请日期 2007.07.12
申请人 SHIN-ETSU CHEMICAL CO., LTD.;SHIN-ETSU HANDOTAI CO., LTD. 发明人 OJIMA, SATOYUKI;OHTSUKA, HIROYUKI;UEGURI, TOYOHIRO;WATABE, TAKENORI;ISHIKAWA, NAOKI
分类号 H01L31/04;H01L21/28;H01L21/288;H01L31/0224 主分类号 H01L31/04
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