发明名称 MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To solve such a problem that the chip size increases when configuring a three-wavelength semiconductor laser device by arranging a two-wavelength laser consisting of a red laser diode and an infrared laser diode, and a blue-violet laser diode side by side, because the distance between the light-emitting points of two lasers in the two-wavelength laser is limited, and that the manufacturing cost increases when stacking the two-wavelength laser and the blue-violet laser vertically because the assembly process is complicated. <P>SOLUTION: A three-wavelength semiconductor laser device is configured by mounting a blue-violet laser diode and a two-wavelength laser diode, having the light-emitting points formed near the chip end, side by side. This can provide an easy-to-manufacture three-wavelength semiconductor laser device in which three light-emitting points can be brought close to each other. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013016585(A) 申请公布日期 2013.01.24
申请号 JP20110147450 申请日期 2011.07.01
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURAMOTO KYOSUKE;TATSUOKA YASUAKI
分类号 H01S5/022 主分类号 H01S5/022
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