| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor light-emitting element which can improve reliability of electrical characteristics; a wafer which can improve reliability of electrical characteristics of a nitride semiconductor light-emitting element; and a nitride semiconductor light-emitting element which can improve reliability of electrical characteristics. <P>SOLUTION: In a manufacturing method of a nitride semiconductor light-emitting element including a single crystal substrate 1, an AlN layer 2, a first conductivity type first nitride semiconductor layer 3, a luminescent layer 4 composed of an AlGaN-based material and a second conductivity type second nitride semiconductor layer 6, the method of forming the AlN layer 2 comprises: a first process of supplying a material gas of Al and a material gas of N to form a group of Al-polarity AlN crystal nuclei 2a which become a part of the AlN layer 2, on one surface of the single crystal substrate 1; and a second process of supplying a material gas of Al and a material gas of N after the first process to form the AlN layer 2. In the first process, a substrate temperature is set at a first predetermined temperature which enables suppression of growth of N-polarity AlN crystals 2b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
