发明名称 CRYSTAL PRODUCTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a crystal production method in which a crack in a crucible is prevented and a crystal is produced with less unintended impurities mixed therein. <P>SOLUTION: The crystal production method includes: a process of preparing a crystal production apparatus in which a buffer layer 110 is arranged between the crucible 101 inner wall 101a and raw materials 17; and a process of growing the crystal in the crystal production apparatus. In the preparation process, the buffer layer 110 is arranged which has a melting point higher than a temperature to grow the crystal in the growing process and also has at least either of higher ductility and higher brittleness than the materials that composes the crucible 101. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013014519(A) 申请公布日期 2013.01.24
申请号 JP20120237088 申请日期 2012.10.26
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NISHIGUCHI TARO
分类号 C30B23/06;C30B29/36 主分类号 C30B23/06
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