| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device and a thin film manufacturing method which can deposit a high-quality thin film, and easily correspond to the deposition of a large surface. <P>SOLUTION: A plasma processing device includes: a reaction chamber 1 for storing a body 4 to be processed; a stage 5 disposed in the reaction chamber 1, and holding the body 4 to be processed; an inner antenna 7 disposed in the reaction chamber 1, and generating high-frequency electric discharge in the reaction chamber 1; a partition plate 11 for partitioning the inside of the reaction chamber 1 into a lower space 10a and an upper space 10b; a first gas supply portion for supplying first gas to a plasma area 10a2; and a second gas supply portion for supplying second gas to a plasma suppressing area 10a1. In the reaction chamber 1, the first gas which is turn to plasma and the second gas in which turning into plasma is suppressed are brought into contact with each other to cause a decomposition reaction, and a thin film is deposited on the body 4 to be processed on the basis of the decomposition reaction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
