| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which suppresses increase in the number of components and increase in occupied area caused by an external protection element such as a diode, and has high maximum avalanche energy bi-directionally. <P>SOLUTION: The nitride semiconductor device comprises; a semiconductor substrate 10 composing a transistor 11 together with a first n-type region 12A and a second n-type region 12B; a back electrode 13 bonded to a rear face of the semiconductor substrate 10; and an HFET 21 formed on the semiconductor substrate 10. The HFET 21 comprises a semiconductor layer laminate 23 including an AlGaN layer 23A and a GaN layer 23B, a first ohmic electrode 24A, a second ohmic electrode 24B, a first gate electrode 25A and a second gate electrode 25B. The first ohmic electrode 24A is electrically connected with the first n-type region 12A. The second ohmic electrode 24B is electrically connected with the second n-type region 12B. <P>COPYRIGHT: (C)2013,JPO&INPIT |
