发明名称 |
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE |
摘要 |
Provided is a crack-free epitaxial substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a first and a second lamination unit being alternately laminated such that each of an uppermost and a lowermost portion of the buffer layer is formed of the first lamination unit. The first lamination unit is formed of a first and a second composition layer having different compositions being alternately laminated so as to increase the thickness of the second composition layer in a portion more distant from the base substrate side, to thereby cause a compressive strain to exist in the first lamination unit such that it increases in a portion more distant from the base substrate. The second lamination unit is formed as an intermediate layer that is substantially strain-free and formed with a thickness of 15 nm or more and 150 nm or less.
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申请公布号 |
US2013020583(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213627206 |
申请日期 |
2012.09.26 |
申请人 |
NGK INSULATORS, LTD.;NGK INSULATORS, LTD. |
发明人 |
MIYOSHI MAKOTO;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;MAEHARA SOTA;TANAKA MITSUHIRO |
分类号 |
H01L29/205;H01L21/20;H01L29/20 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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