SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a memory capable of storing multiple-value information by a comparatively simple process technology and with less number of elements.

SOLUTION: In a memory device 426, multiple-value information more than 1 bit is stored in one memory cell by differentiating a part of shape of a first electrode 417 in a first storage element from shape of a first electrode 417 in a second storage element for differentiating a voltage value that changes electric resistance between the first electrode 417 and a second electrode 420. By partially processing the first electrode 417, memory capacity per unit area can be increased.

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