LAMINATION STRUCTURE HAVING OXIDE SEMICONDUCTOR THIN FILM LAYER, LAMINATION STRUCTURE MANUFACTURING METHOD, THIN FILM TRANSISTOR AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-quality oxide thin film by controlling a crystal orientation of an oxide thin film.

SOLUTION: A lamination structure comprises an oxide layer to become a channel layer of a thin film transistor and an insulation layer. The oxide layer is composed of a material having substantially a bixbyite structure of indium oxide. A carrier concentration of the oxide layer is 1018/cm3or less and an average crystal grain size of the oxide layer is 1 μm or more. Crystals of the oxide layer are arranged like columns on a surface of the insulation layer.

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