发明名称 |
GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A group III nitride semiconductor light emitting device includes an n-type cladding layer and a p-type cladding layer on a primary surface of a substrate, the c-axes of which tilt relative to the normal axis of the primary surface of the substrate. The p-type cladding layer is doped with a p-type dopant providing an acceptor level, and the p-type cladding layer contains an n-type impurity providing a donor level. An active layer is disposed between the n-type cladding layer and the p-type cladding layer. The concentration of the p-type dopant is greater than that of the n-type impurity. The difference (E(BAND)−E(DAP)) between the energy E(BAND) of a band-edge emission peak value in the photoluminescence spectrum of the p-type cladding layer and the energy E(DAP) of a donor-acceptor pair emission peak value in the photoluminescence spectrum is not more than 0.42 electron volts.
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申请公布号 |
US2013020551(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213453718 |
申请日期 |
2012.04.23 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;YONEMURA TAKUMI;KYONO TAKASHI;ENYA YOHEI |
发明人 |
YONEMURA TAKUMI;KYONO TAKASHI;ENYA YOHEI |
分类号 |
H01L33/06;H01L33/18 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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