MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transistor which uses an oxide semiconductor having good on-state characteristics, and also to provide a high-performance semiconductor device including a transistor achieving high-speed response and high-speed driving.

SOLUTION: A manufacturing step of a transistor having an oxide semiconductor film including a channel formation region forms a low resistance region including: a metal element introduced by performing heat treatment in a state in which a film containing a metal element is in contact with the oxide semiconductor film; and a dopant introduced into the oxide semiconductor film by passing the dopant through the film containing the metal element in an injection method. The low resistance region is formed in a channel length direction with the channel formation region sandwiched in between.

COPYRIGHT: (C)2013,JPO&INPIT