发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which is not likely to cause cracks in a sealing resin or be peeled from a substrate even if a semiconductor element is repeatedly operated at high temperature and is subject to heat cycles. <P>SOLUTION: A semiconductor device includes: a semiconductor element substrate where a surface electrode pattern and a rear surface electrode pattern are formed on one surface and the other surface of an insulation substrate respectively; a semiconductor element joined to a surface of the surface electrode pattern which is on the opposite side of the insulation substrate, through a joining material; a first sealing resin covering the semiconductor element and the surface electrode pattern; and a second sealing resin covering at least a portion on the surface of the insulation substrate where the surface electrode pattern or the rear surface electrode pattern is not formed, and the first sealing resin. The elastic modulus of the second sealing resin is smaller than that of the first sealing resin, and a step is provided so that the thickness of a center part of the first sealing resin, which corresponds to the semiconductor element, becomes larger than that of a peripheral part thereof. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013016684(A) 申请公布日期 2013.01.24
申请号 JP20110149054 申请日期 2011.07.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 TERAI MAMORU;MATSUMOTO MICHIHITO
分类号 H01L23/29;H01L23/28;H01L23/31;H01L25/07;H01L25/18 主分类号 H01L23/29
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