| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element exhibiting superior low current operation and having excellent retention properties, and a memory device. <P>SOLUTION: The memory element comprises a first electrode, a memory layer and a second electrode in this order, the memory layer comprises a resistance change layer provided on a first electrode side and an ion source layer having at least one metal element and provided on the second electrode side, and the ion source layer consists of a first ion source layer containing at least one kind of chalcogen element between tellurium (Te), sulfur (S) and selenium (Se) and provided on the resistance change layer side, and a second ion source layer having an amount of the chalcogen element being different from that of the first ion source layer and provided on the second electrode side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
