| 摘要 |
<P>PROBLEM TO BE SOLVED: To optimize withstand current capability and loss in a semiconductor switch at a position where current variation is large. <P>SOLUTION: A semiconductor switch 1a is formed by connecting an FET 11 and an IGBT 12 in parallel that have different electrical characteristics and different types from each other. When connecting between terminals 5 and 6, the FET 11 and the IGBT 12 are simultaneously turned on. When a current between the terminals 5 and 6 is small, since the internal resistance of the FET 11 is smaller than that of the IGBT 12, the current preferentially flows into the FET 11 side, and thereby achieving low loss. Although the internal resistance of the FET 11 increases due to heat generation as the current between the terminals 5 and 6 increases, the current preferentially flows into the IGBT 12 side at a predetermined current value or above because the internal resistance of the IGBT 12 seldom changes. As a result, the degradation or the breakdown of the FET 11 due to flow of a large current into the FET 11 side is avoided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
