发明名称 ANTI-FUSE CIRCUIT AND METHOD FOR ANTI-FUSE PROGRAMMING AND TEST THEREOF
摘要 An anti-fuse circuit including a plurality of programmable units and a test module is provided. The programmable units receive a stress voltage, a program data, and a write enable signal. During a programming period, the programmable units sequentially transmit the program data. When the write enable signal is enabled, the stress voltage stresses the programmable units according to the program data, and the programmable units output programming results for test. The test module is coupled to the programmable units and receives the program data and the programming results. During a test period, the test module compares the programming results with the program data and outputs different logic levels according to a result of the comparison of the first programming results and the program data. A method for anti-fuse programming and test adapted to the foregoing anti-fuse circuit is also provided.
申请公布号 US2013021851(A1) 申请公布日期 2013.01.24
申请号 US201113187534 申请日期 2011.07.21
申请人 ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.;CHANG CHIEN-YI;HUANG MING-CHIEN 发明人 CHANG CHIEN-YI;HUANG MING-CHIEN
分类号 G11C7/10;G11C7/00 主分类号 G11C7/10
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