发明名称 |
METHODS FOR FABRICATING SEMICONDUCTOR DEVICES |
摘要 |
In a method for fabricating a semiconductor device, a substrate is provided including an interlayer dielectric layer and first and second hard mask patterns sequentially stacked thereon. A first trench is provided in the interlayer dielectric layer through the second hard mask pattern and the first hard mask pattern. A filler material is provided on the interlayer dielectric layer and the second hard mask pattern to fill the first trench. An upper portion of the second hard mask pattern is exposed by partially removing the filler material. The second hard mask pattern is removed, and remaining filler material is removed from the first trench. A wiring is formed by filling the first trench with a conductive material.
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申请公布号 |
US2013023119(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213488478 |
申请日期 |
2012.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK SANG-JINE;KWON KEE-SANG;YUN DOO-SUNG;YOON BO-UN;YOON IL- YOUNG;HAN JEONG-NAM |
发明人 |
PARK SANG-JINE;KWON KEE-SANG;YUN DOO-SUNG;YOON BO-UN;YOON IL- YOUNG;HAN JEONG-NAM |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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