摘要 |
A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed. |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;ZHANG, MINXIAN MAX;YANG, JIANHUA;WILLIAMS, R. STANLEY |
发明人 |
ZHANG, MINXIAN MAX;YANG, JIANHUA;WILLIAMS, R. STANLEY |