发明名称 APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION
摘要 Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.
申请公布号 WO2012166265(A3) 申请公布日期 2013.01.24
申请号 WO2012US34922 申请日期 2012.04.25
申请人 APPLIED MATERIALS, INC.;SINGH, SARAVJEET;SCOTT, GRAEME JAMIESON;SABHARWAL, AMITABH;KUMAR, AJAY 发明人 SINGH, SARAVJEET;SCOTT, GRAEME JAMIESON;SABHARWAL, AMITABH;KUMAR, AJAY
分类号 H01L21/3065 主分类号 H01L21/3065
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