| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device. <P>SOLUTION: Provided is a nitride semiconductor light emitting device including: a light emitting structure having a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween; p-side and n-side electrodes respectively electrically connected to the p-type nitride semiconductor layer and the n-type nitride semiconductor layer; and a contact layer positioned between the p-type nitride semiconductor layer and the p-side electrode, and including a first p-type nitride layer having a first impurity concentration so as to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration lower than the first impurity concentration. <P>COPYRIGHT: (C)2013,JPO&INPIT |
