| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin-injection writing type magnetoresistive element, which is thermally stable and in which reduction in a magnetoresistance ratio can be suppressed. <P>SOLUTION: A fixed layer 2 has a configuration in which a first magnetic material film 2a provided so as to contact a non-magnetic layer 4, a non-magnetic material film 2b provided so as to contact the first magnetic material film 2a, a second magnetic material film 2c provided so as to contact the non-magnetic material film 2b, and a third magnetic material film 2d provided so as to contact the second magnetic material film 2c are stacked. The second magnetic material film 2c has a Co concentration higher than that of the first magnetic material film 2a. By letting a current flow between the fixed layer 2 and a storage layer 3 via the non-magnetic layer 4, a direction of magnetization of the storage layer 3 becomes variable. <P>COPYRIGHT: (C)2013,JPO&INPIT |
