| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element capable of suppressing occurrence of defects in a diffraction grating. <P>SOLUTION: A manufacturing method of a semiconductor laser element comprises: a mold 1 preparation step; a semiconductor laminate formation step; and a stripe structure formation step. A striped recess of the mold 1 has two end parts 3E and one central part 3M. Depth T3E of the two end parts 3E is deeper than depth T3M of the central part 3M. The semiconductor laminate formation step includes the steps of: depositing a semiconductor layer 17; forming a resin pattern part 21P on a resin part 21 by transferring a shape of a striped recess 3 to the resin part 21; and forming a diffraction grating 17P by transferring a shape of the resin pattern part 21P to the semiconductor layer 17. The stripe structure formation step includes an etching step of etching a semiconductor laminate 30 so as to remove both end parts in a direction orthogonal to a third direction (Y-axis direction) of the diffraction grating 17P. <P>COPYRIGHT: (C)2013,JPO&INPIT |
