NONVOLATILE SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device manufacturing method which achieves reduction in a distance between gate electrodes of selection gate transistors.

SOLUTION: A nonvolatile semiconductor storage device manufacturing method of an embodiment comprises: forming a plurality of first element regions, a plurality of element isolation regions and a plurality of second element regions on a semiconductor substrate; forming a memory cell gate electrode and two selection gate electrodes on each first element region; forming a peripheral gate electrode in each second element region; forming a first insulation film; forming a first resist pattern having openings each opened on side walls of each peripheral gate electrode; performing a first etching treatment to form a side wall insulation film; forming a second resist pattern; performing a second etching treatment to remove the first insulation film on the side walls of the selection gate electrodes; depositing a second insulation film; depositing a third insulation film; forming a third resist pattern having openings each opened on between the two select gate electrodes; and performing a third etching treatment and a fourth etching treatment to form contact holes.

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