发明名称 |
PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL |
摘要 |
A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.
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申请公布号 |
US2013021845(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201113638311 |
申请日期 |
2011.03.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;ELEFTHERIOU EVANGELOS S.;PANTAZI ANGELIKI;PAPANDREOU NIKOLAOS;POZIDIS HARIS;SEBASTIAN ABU |
发明人 |
ELEFTHERIOU EVANGELOS S.;PANTAZI ANGELIKI;PAPANDREOU NIKOLAOS;POZIDIS HARIS;SEBASTIAN ABU |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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