NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor epitaxial substrate with low dislocation having a group III nitride semiconductor layer capable of controlling occurrence of cracking, and to provide a nitride semiconductor device.

SOLUTION: The nitride semiconductor epitaxial substrate includes a group III nitride semiconductor layer of which C-surface is a surface grown via a buffer layer of the group III nitride semiconductor containing Al on a substrate. The buffer layer has an inversion domain in the surface.

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