| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can improve yield. <P>SOLUTION: A semiconductor device manufacturing method according to an embodiment comprises: an anneal process of performing an anneal treatment for activating a source and a drain of a test transistor and a product transistor each formed on a semiconductor substrate; a test salicide process of silicifying a gate, a source and a drain of the test transistor after the annealing process; a measurement process of measuring characteristics of the test transistor after the test salicide process; a characteristic adjustment anneal process of performing a characteristic adjustment anneal treatment for bringing characteristics of the product transistor closer to intended characteristics on the basis of a difference between the characteristics measured in the measurement process and the intended characteristics; and a product salicide process of silicifying a gate, a source and a drain of the product transistor after the characteristic adjustment anneal process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
