发明名称 ION INJECTION DEVICE AND ION INJECTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide an ion injection device and an ion injection method capable of preventing deterioration of a mounting part on which a wafer is not mounted without using a dummy wafer. <P>SOLUTION: According to an embodiment, there is provided an ion injection device. The ion injection device comprises an ion injection part, a plurality of mounting parts, and a tilt mechanism. The ion injection device injects ions into a wafer by irradiating the wafer with ion beams. The mounting parts are configured such that wafers can be mounted thereon, and are sequentially moved to irradiation regions which are irradiated with the ion beams. The tilt mechanism tilts the mounting part on which a wafer is not mounted to a position which is not irradiated with the ion beams. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013016318(A) 申请公布日期 2013.01.24
申请号 JP20110147449 申请日期 2011.07.01
申请人 TOSHIBA CORP 发明人 ITO TAKAYUKI;MIYAZAKI KUNIHIRO
分类号 H01J37/317;H01J37/09;H01L21/265 主分类号 H01J37/317
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