发明名称 |
Semiconductor memory device |
摘要 |
A floating gate of a semiconductor memory device has a gate bird beak on an end portion thereof. Further, a positional relationship between the floating gate and a drain is controlled such that a depletion layer formed within the drain in a non-selected state of the semiconductor memory device faces the gate bird beak without interposing the drain therebetween. Accordingly, drain disturbance can be efficiently prevented.
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申请公布号 |
US5986302(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19980018305 |
申请日期 |
1998.02.03 |
申请人 |
DENSO CORPORATION |
发明人 |
FUKATSU, SHIGEMITSU;KAWAGUCHI, TSUTOMU;OKUNO, TAKUYA;YOGO, YUKIAKI |
分类号 |
H01L21/28;H01L29/788;(IPC1-7):H01L29/76;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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