发明名称 |
RESISTIVE RAM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR DRIVING THE SAME |
摘要 |
A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
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申请公布号 |
US2013021835(A1) |
申请公布日期 |
2013.01.24 |
申请号 |
US201213554635 |
申请日期 |
2012.07.20 |
申请人 |
HWANG HYUN-SANG;LIU XINJUN;SON MYOUNG-WOO |
发明人 |
HWANG HYUN-SANG;LIU XINJUN;SON MYOUNG-WOO |
分类号 |
H01L47/00;G11C7/00;G11C11/21;H01L21/02 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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