| 摘要 |
When producing ferroelectric memory devices on a wafer, a memory cell expected to provide the severest degradation of fatigue characteristics is selected from a chip region of the wafer in which the fatigue characteristics are expected to be the poorest, based on the knowledge acquired in advance with regard to the in-plane distribution of the fatigue characteristics on a wafer. The predetermined number of times of rewriting data is guaranteed by conducting fatigue test in the memory cell thus selected for all of the wafers such that, when the result of the fatigue test is good, the entire devices on the wafer are rendered good with regard to the fatigue characteristics.
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