THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Provided is a thin film device that includes a thin film electrode including a main electrode layer formed of tungsten, wherein the thin film electrode has low resistivity. A thin film device (1) includes a thin film electrode (7) that has a ground layer (7A) and a main electrode layer (7B) formed on the ground layer (7A), the ground layer (7A) is formed of titanium tungsten alloy in which a surface morphology has a wave-shaped crystal structure, and the main electrode layer (7B) is formed of tungsten in which a surface morphology has a wave-shaped crystal structure.