发明名称 Sputtering device and sputtering method
摘要 <p>A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21) ; and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).</p>
申请公布号 GB2487681(B) 申请公布日期 2013.01.23
申请号 GB20120006149 申请日期 2009.09.29
申请人 CANON ANELVA CORPORATION 发明人 TORU KITADA;NAOKI WATANABE;MOTONOBU NAGAI;MASAHIRO SUENAGA;TAKEO KONNO
分类号 C23C14/34;C23C14/35;C23C14/50;C23C14/54;H01F41/18;H01J37/32;H01J37/34 主分类号 C23C14/34
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