| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having a conductive layer for maintaining the operating speed of a device by using conductive materials having a work function in the neighborhood of the Mid-Gap of the energy band gap of substrate materials in the neighborhood of a boundary with at least the insulating film formed on a substrate, without causing deterioration of the breakdown voltage of an insulating film formed on the substrate, or the deteriorating the capacity of the formed conductive layer, and a method for manufacturing the semiconductor device. SOLUTION: This semiconductor device is provided with a substrate 101, an insulating film 103 formed on the substrate 101, a conductive layer formed on the insulating film 103 with a part brought into contact with at least the insulating film 103 is made of conductive materials, having a work function in the neighborhood substantially at the center of the energy band gap of substrate materials and containing prescribed amounts of impurity, and a lead-out electrode formed on the substrate 101. A method for manufacturing the semiconductor device is also provided.
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