| 摘要 |
PROBLEM TO BE SOLVED: To provide a piezoelectric resonator which has higher mechanical strength than amorphous SiO2 and an extremely small temperature coefficient, shows a high Q value and can be easily produced by providing a vibrator having electrodes formed on both surfaces of a piezoelectric thin film on the surface opposite to a recess part of a substrate thin layer part. SOLUTION: A recess part 2 is formed on a substrate 1 to form a substrate thin layer part 3, and a vibrator 7 having a lower electrode 5 formed on the under surface of a piezoelectric thin film 4 and a pair of upper electrodes 6 formed on the top surface of the film 4 is provided on the surface opposite to a recess part 2 of the part 3. The substrate 1 consists of quartz, namely crystalline SiO2, and the part 2 is formed by etching the substrate 1 to provide a vibrating space A. By using quartz being crystalline SiO2 as the part 3 which supports the vibrator 7, satisfactory strength is attained for the part 3 without deteriorating the temperature characteristics of the resonance frequency and also a large Q value is obtained at high frequencies exceeding 1 GHz.
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