| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide type semiconductor laser element of superior reliability whose laser characteristic is improved, and a method for manufacturing it. SOLUTION: A clad layer 3, an active layer 4, a clad layer 5, a GaInP cap layer 6, a ridge part 7 etching-formed from a center part of the GaInP cap layer 6 to the middle of the clad layer 5, GaAs current-constricting layers 8 and 8 sandwiching the ridge part 7 on the clad layer 5, and a GaAs contact layer 9 that are laminated in this order on a GaAs substrate 2 are comprised, and a width L0 of the GaInP cap layer 6 is made narrower than an upper end width L1 of the clad layer 5 adjoining the GaInP cap layer 6, so that an upper end surface of the clad layer 5 is covered with the GaAs current-constricting layers 8 and 8. Furthermore, this method uses acetic acid etching liquid to etch the GaInP cap layer 6.
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