摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which can realize electrostatic breakdown strength equal to the conventional electrostatic breakdown strength, while suppressing increase in the area of a protective circuit. SOLUTION: A semiconductor device 1000, which is manufactured through an SOI-CMOS process, is provided with a first protective element A comprising a ground terminal 300 for connecting to the outside, an N-MOS output transistor 7, an N-type lightly-doped diffused region 5 formed with heavily-doped diffused regions 4 and 6 on both ends of the region 5 and a gate electrode 5g formed on the upper part of the region 5 via a gate oxide film, and an output tunnel 100. A source terminal 7s of the transistor 7 is connected with the terminal 300, a drain terminal 7d of the transistor 7 is connected with one end of the region 6 of the element A, the other end of the region 4 of the element A is connected with the terminal 100, and the electrode 5g of the element A is connected with the terminal 300.
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