发明名称 NICKEL ALLOY SPUTTERING TARGET, THIN Ni ALLOY FILM, AND NICKEL SILICIDE FILM
摘要 <p>Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at%, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at%, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni-Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.</p>
申请公布号 EP2548994(A1) 申请公布日期 2013.01.23
申请号 EP20110756442 申请日期 2011.03.18
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 YAMAKOSHI YASUHIRO;OHASHI KAZUMASA
分类号 C23C14/34;C22C5/04;C22C19/03;C23C14/14 主分类号 C23C14/34
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