| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system and a film deposition method capable of continuously executing film forming tretment for plural times at stable deposited film thickness without depending on cleaning stages by plasma in a reaction chamber. SOLUTION: In a film deposition method in which a film deposition stage S1 in which film deposition treatment S1a is executed for plural times and a cleaning stage S2 in which the inside of a reaction chamber is subjected to plasma cleaning are repeatedly executed, between the cleaning stage S2 and the film deposition stage S1 executed thereafter, a cooling stage S3, in which the inside of the reaction chamber is cooled, is executed. In this way, the film deposition stage S1 is executed without depending on the increase of the temp. in the reaction chamber in the cleaning stage S2, and the conditions of the film deposition temp. in each film deposition treatment S1a in the film deposition stage S1 are uniformized.
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