| 摘要 |
PROBLEM TO BE SOLVED: To form a silicon carbide single crystal so as to have a shape to be finally used as a wafer. SOLUTION: When placing a guide 7 in the vicinity of a silicon carbide single crystal substrate 3 so as to surround the circumference of the substrate 3 and to grow a silicon carbide single crystal 10, the growth of the single crystal 10 toward the guide direction is controlled by making the guide 7 have a higher temperature than the sublimation temperature of silicon carbide. To be concrete, when the guide 7 is made to have the shape of a nearly hollow hexagonal cylinder, the silicon carbide single crystal 10 of the hexagonal cylinder can be produced. When a diagonal line which passes through the apex of the hexagon and the center of the hexagon accords with the direction of <112-0> or <11-00> of the silicon carbide single crystal substrate 3, the silicon carbide single crystal 10 registered in this direction is obtained.
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