METHOD AND APPARATUS FOR MEASURING GAS IN SILICON SINGLE CRYSTAL GROWTH UNIT

摘要

PROBLEM TO BE SOLVED: To indirectly measure the evolved quantity of SiO gas vaporized from silicon melt by means of an external unit located outside a silicon single crystal growth unit. SOLUTION: A suction nozzle 28, to the tip of which a carbon element 33 having continuous holes is attached, is installed above silicon melt 12 in a silicon single crystal growth unit 10. SiO gas evolved from the liquid surface of the melt is aspirated by the suction nozzle 28 and is converted into CO gas when passing through the carbon element 33. The CO gas is drawn out of the growth unit and is analyzed with a mass spectrometer 31 to indirectly measure the quantity of SiO gas.