SEMICONDUCTOR DEVICE HAVING SELECTIVE EPITAXIAL GROWTH LAYER AND ISOLATION METHOD THEREOF

摘要

PURPOSE: A method for isolating a semiconductor device having a selective epitaxial growth layer is provided to prevent an insulating layer from being peeled off or to prevent a void from being generated between the insulating layer and a silicon substrate, by making a sidewall of an opening have a positive incline in etching the insulating layer to reduce the stress applied by a selectively epitaxial growth to the insulating layer. CONSTITUTION: An insulating layer(12) for isolation is formed on a silicon substrate(10). The insulating layer for isolation is selectively etched to make a sidewall have a predetermined positive incline angle, and an opening is formed to expose the surface of the silicon substrate. The silicon exposed to the inside of the opening is used as a seed and selectively epitaxial-grown to be lower than the insulating layer. A sacrificial oxide layer is formed on the selectively epitaxial-grown silicon. The sacrificial oxide layer is eliminated.