| 摘要 |
PURPOSE: A silicon heat sink and a fabricating method therefor are provided to be easily fabricated when a high accuracy is required by using a silicon as a material, and to enhance a heat effect by accurately processing a depth of a lower hole and forming a gap between a heat sink and a chip, which is low than a thickness of a buffering material. CONSTITUTION: A silicon substrate has the first surface with a convex-concave portion(31-1) for increasing a surface area and the second surface with one hole(31-2) or more for receiving a semiconductor chip(32). A metal thin film is formed in a silicon heat sink(31) for increasing a mechanical intensity of the silicon substrate. An electric wire is formed in a substrate(33). A plurality of semiconductor chips(32) is mounted on the substrate(33) using a solder bump(36), and is located in the hole(31-2) formed in the second surface of the silicon heat sink(31). A connection material(34) is formed around the hole(31-2) of the second surface for connecting the semiconductor chip(320 with a surface of the hole(31-2) of the silicon heat sink(31), having a buffering material(35) to transmit a heat of the semiconductor chip(32) to the silicon heat sink(31), and connecting a metal thin film of the silicon heat sink(31) to a ground electrode of the substrate(33). |
