Process for the production of etched items using CHF3

摘要

Disclosed is process for producing an etched item having a sub-micron photoresist layer comprising a step of plasma etching of an inorganic substrate, e.g. a silicon oxide layer or a silicon nitride layer, wherein the etchant composition comprises COF 2 and CHF 3 and optionally a diluent and/or an oxygen compound. The etchant composition of the present invention provides improved etching characteristics and enable etching sub-micron layer.