Multi-stack Mask layer silicon-oxide etching method using the Hybrid Plasma Source and ESC heater

摘要

PURPOSE: A method for etching an oxide film having a multi-stack mask layer structure using an electrostatic chuck heater or a hybrid plasma source is provided to improve processing efficiency by obtaining etching uniformity. CONSTITUTION: A wafer is loaded on an electrostatic chuck(10). The temperature of an outer zone and an inner zone is respectively optimized by heating the electrostatic chuck. A mask layer is etched by generating plasma within a reaction chamber. A current applied to a heater(30) in the electrostatic chuck is interrupted. An oxide film on the mask layer is etched.